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PDF C4953 Data sheet ( Hoja de datos )
| Número de pieza | C4953 | |
| Descripción | NPN Transistor - 2SC4953 | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de C4953 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Power Transistors
2SC4953
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
q High-speed switching
q High collector to base voltage VCBO
q Wide area of safe operation (ASO)
q Satisfactory linearity of foward current transfer ratio hFE
q Dielectric breakdown voltage of the package: > 5kV
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCES
VCEO
VEBO
ICP
IC
IB
PC
Tj
Tstg
500
500
400
7
6
3
1.2
30
2.0
150
–55 to +150
Unit
V
V
V
V
A
A
A
W
˚C
˚C
9.9±0.3
4.6±0.2
2.9±0.2
φ3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.54±0.3
1 2 3 5.08±0.5
2.6±0.1
0.55±0.15
1:Base
2:Collector
3:Emitter
TO–220D Full Pack Package
s Electrical Characteristics (TC=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
VCB = 500V, IE = 0
VEB = 5V, IC = 0
100 µA
100 µA
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
400
V
Forward current transfer ratio
hFE1
hFE2
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
10
8 40
Collector to emitter saturation voltage VCE(sat)
IC = 1.5A, IB = 0.3A
1.0 V
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VBE(sat)
fT
ton
tstg
tf
IC = 1.5A, IB = 0.3A
VCE = 10V, IC = 0.2A, f = 1MHz
IC = 1.5A, IB1 = 0.15A, IB2 = – 0.3A,
VCC = 200V
1.5 V
10 MHz
1.0 µs
3.0 µs
0.3 µs
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet C4953.PDF ] | |
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