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PDF MMSF4P01HD Data sheet ( Hoja de datos )

Número de pieza MMSF4P01HD
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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MMSF4P01HD
Preferred Device
Power MOSFET
4 Amps, 12 Volts
P−Channel SO−8
These miniature surface mount MOSFETs feature ultra low RDS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a very low reverse recovery time.
MiniMOSt devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc−dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Mounting Information for SO−8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) (Note 1.)
Rating
Symbol Value Unit
Drain−to−Source Voltage
VDSS
12 Vdc
Drain−to−Gate Voltage (RGS = 1.0 M)
VDGR
12 Vdc
Gate−to−Source Voltage − Continuous
VGS ± 8.0 Vdc
Drain Current − Continuous @ TA = 25°C
Drain Current − Continuous @ TA = 100°C
Drain Current − Single Pulse (tp 10 µs)
ID
ID
IDM
5.1 Adc
3.3
26 Apk
Total Power Dissipation @ TA = 25°C
(Note 2.)
PD 2.5 Watts
Operating and Storage Temperature Range
− 55 to 150
°C
Thermal Resistance − Junction to Ambient
(Note 2.)
RθJA
50 °C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
TL
260 °C
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2square FR4 board (1sq. 2 oz. Cu 0.06thick single sided),
10 sec. max.
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4 AMPERES
12 VOLTS
RDS(on) = 80 mW
P−Channel
D
G
S
MARKING
DIAGRAM
SO−8
8 CASE 751
STYLE 13
1
S4P01
LYWW
L = Location Code
Y = Year
WW = Work Week
PIN ASSIGNMENT
N−C
Source
Source
Gate
18
27
36
45
Top View
Drain
Drain
Drain
Drain
ORDERING INFORMATION
Device
Package
Shipping
MMSF4P01HDR2 SO−8 2500 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev. XXX
1
Publication Order Number:
MMSF4P01HD/D

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MMSF4P01HD pdf
MMSF4P01HD
5
4
3
Q1
2
QT
VDS
Q2
1 Q3
10
8
VGS
6
ID = 4 A
TJ = 25°C
4
2
00
0 5 10 15 20 25
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 6 V
ID = 4 A
VGS = 4.5 V
TJ = 25°C
100 td(off)
tf
tr
td(on)
10
1 10
100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse
recovery characteristics which play a major role in
determining switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier
device, therefore it has a finite reverse recovery time, trr, due
to the storage of minority carrier charge, QRR, as shown in
the typical reverse recovery wave form of Figure 14. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery
further increases switching losses. Therefore, one would
like a diode with short trr and low QRR specifications to
minimize these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current
ringing. The mechanisms at work are finite irremovable
circuit parasitic inductances and capacitances acted upon by
high di/dts. The diode’s negative di/dt during ta is directly
controlled by the device clearing the stored charge.
However, the positive di/dt during tb is an uncontrollable
diode characteristic and is usually the culprit that induces
current ringing. Therefore, when comparing diodes, the
ratio of tb/ta serves as a good indicator of recovery
abruptness and thus gives a comparative estimate of
probable noise generated. A ratio of 1 is considered ideal and
values less than 0.5 are considered snappy.
Compared to ON Semiconductor standard cell density
low voltage MOSFETs, high cell density MOSFET diodes
are faster (shorter trr), have less stored charge and a softer
reverse recovery characteristic. The softness advantage of
the high cell density diode means they can be forced through
reverse recovery at a higher di/dt than a standard cell
MOSFET diode without increasing the current ringing or the
noise generated. In addition, power dissipation incurred
from switching the diode will be less due to the shorter
recovery time and lower switching losses.
4
VGS = 0 V
TJ = 25°C
3
2
1
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
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MMSF4P01HD arduino
Notes
MMSF4P01HD
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