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PDF WPM2019 Datasheet ( Hoja de datos )

Número de pieza WPM2019
Descripción Single P-Channel Power MOSFET
Fabricantes WillSEMI 
Logotipo WillSEMI Logotipo

Total 6 Páginas
		
WPM2019 Hoja de datos, Descripción, Manual
WPM2019
Single P-Channel, -20V, -0.73A, Power MOSFET
VDS (V)
-20
Rds(on) (ȍ)
0.480@ VGS=̢4.5V
0.620@ VGS=̢2.5V
0.780@ VGS=̢1.8V
WPM2019
Http://www.sh-willsemi.com
D
S
G
Descriptions
SOT-523
The WPM2019 is P-Channel enhancement MOS
Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM2019 is Pb-free and
Halogen-free.
Features
z Trench Technology
z Supper high density cell design
z Excellent ON resistance for higher DC current
z Extremely Low Threshold Voltage
z Small package SOT-523
Applications
z Driver for Relay, Solenoid, Motor, LED etc.
z DC-DC converter circuit
z Power Switch
z Load Switch
z Charging
D
3
12
GS
Pin configuration (Top view)
3
P9*
12
P9 =Device Code
* = Month(A~Z)
Marking
Order information
Device
Package
Shipping
WPM2019-3/TR SOT-523 3000/Reel&Tape
Will Semiconductor Ltd.
1
2015/08/25 – Rev. 1.4

1 page

WPM2019 pdf
120
90
60
30
0
0
V =0
GS
f=100KHZ
Cin
Cout
Crss
2468
-V - Drain to Source Voltage (V)
DS
10
Capacitance
14
12
10
8
6
4
2
0
0.0001 0.001
TJ(Max)=150°C
TA=25°C
0.01 0.1
1
Pulse Width (s)
10 100
Single pulse power
WPM2019
250
200
T=1250C
150
100
T=250C
50
0.4
0.5 0.6 0.7 0.8
-V - Source to Drain Voltage(V)
SD
0.9
Body diode forward voltage
10.00
TJ(Max)=150°C, TA=25°C
1.00
0.10
RDS(ON)
limited
DC
0.01
0.1
1 10
-VDS (Volts)
Safe operating power
100μs
1ms
10ms
0.1s
1s
10s
100
10
D=Ton/T
In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=440°C/W
1
0.1
0.01
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
PD
Ton
T
1 10
Transient thermal response (Junction-to-Ambient)
100 1000
Will Semiconductor Ltd.
5
2015/08/25 – Rev. 1.4

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