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WPM2006 Hoja de datos en formato PDF ( Datasheet )

WPM2006 Función - Power MOSFET and Schottky Diode - WillSEMI

Número de pieza WPM2006
Descripción Power MOSFET and Schottky Diode
Fabricantes WillSEMI 
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WPM2006 Hoja de datos, Descripción, Manual
WPM2006
Power MOSFET and Schottky Diode
WPM2006
Features
z Featuring a MOSFET and Schottky Diode
z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low VF Schottky
DFN2*2 -6L
Applications
z Li--Ion Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Drive for Small Brushless DC Motors
z Power Management in Portable, Battery Powered Products
MOSFET MAXIMUM RATINGS (TJ = 25ć unless otherwise noted)
Parameter
DrainŦtoŦSource Voltage
GateŦtoŦSource Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5s
Steady
State
t5s
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Symbol
VDSS
VGS
ID
PD
ID
PD
IDM
TJ, TSTG
Source Current (Body Diode) (Note 2)
IS
Value
Ŧ20
±8.0
Ŧ3
Ŧ2.3
Ŧ4.1
1.45
2.3
Ŧ2.0
Ŧ1.5
0.7
Ŧ20
Ŧ55 to
150
Ŧ2
Unit
V
V
A
W
A
W
A
°C
A
1. Surface Mounted on FR4 Board using 1 in sq pad size, 2 oz Cu.
2. Surface Mounted on FR4 Board using minimum pad size, 2 oz Cu.
1
Pin connections:
A1
N/C 2
D3
K
6K
5G
D
4S
Marking:
SCHOTTKY DIODE MAXIMUM RATINGS(TJ = 25ć unless otherwise noted)
Parameter
Symbol
Limits
Unit
Peak repetitive reverse voltage
.
DC Blocking voltage
VRRM
VR
20
20
V
V
J = Specific Device Code
YWW = Date Code
Average rectified forward current
IF
1
A
Order information
PartN umber
WPM2006Ͳ6/TR

Package
DFN2*2- 6L

 Shipping
3000Tape&Reel
http://www.willsemi.com
Page 1
0Dec, 2011 Rev 2.1





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WPM2006 Datasheet ( Hojas de datos )


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