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PDF WPM2015 Datasheet ( Hoja de datos )

Número de pieza WPM2015
Descripción P-Channel MOSFET
Fabricantes Kexin 
Logotipo Kexin Logotipo

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WPM2015 Hoja de datos, Descripción, Manual
SMD Type
MOSFET
P-Channel MOSFET
WPM2015 (KPM2015)
Features
VDS (V) =-20V
ID =-2.4 A
RDS(ON) 110mΩ (VGS =-4.5V)
RDS(ON) 150mΩ (VGS =-2.5V)
Supper high density cell design
SOT-23
2.9 +0.1
-0.1
0.4 +0.1
-0.1
3
12
0.95 +0.1
-0.1
1.9 +0.1
-0.1
D
3
Unit: mm
0.1 +0.05
-0.01
1. Gate
2. Source
3. Drain
12
GS
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Note.1)
Ta=25°C
Ta=70°C
Power Dissipation
(Note.1)
Ta=25°C
Ta=70°C
Continuous Drain Current
(Note.2)
Ta=25°C
Ta=70°C
Power Dissipation
Pulsed Drain Current
(Note.2)
(Note.3)
Ta=25°C
Ta=70°C
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Lead Temperature
(Note.1)
(Note.2)
Junction Storage Temperature Range
Symbol
VDS
VGS
ID
PD
ID
PD
IDM
RthJA
RthJC
TJ
TL
Tstg
10 S
Steady State
-20
±8
-2.4 -2.2
-1.9 -1.7
0.9 0.8
0.5 0.5
-2.2 -2
-1.7 -1.6
0.7 0.6
0.5 0.4
-10
135 155
160 190
__ 75
150
260
-55 to 150
Note.1: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
Note.2: Surface mounted on FR-4 board using minimum pad size, 1oz copper
Note.3: Pulse width<380μs, Duty Cycle<2%
Unit
V
A
W
A
W
A
/W
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WPM2015 pdf
SMD Type
Typical Characterisitics
1
Duty Cycle = 0.5
P-Channel MOSFET
WPM2015 (KPM2015)
MOSFET
0.2
0.1
0.1
0.05
0.02
0.01
10-4
Notes:
PDM
Single Pulse
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 1 2 0 ° C / W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10 100 1000
Transient thermal response (Junction-to-Ambient)
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