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30V N-Channel MOSFET - AO4708 - Alpha & Omega Semiconductors

Número de pieza AO4708
Descripción 30V N-Channel MOSFET
Fabricantes Alpha & Omega Semiconductors 
Logotipo Alpha & Omega Semiconductors Logotipo
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AO4708 datasheet
AO4708 pdf, arduino
AO4708
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
1.0E-02
1.0E-03
1.0E-04
VDS=24V
VDS=12V
1
0.8
0.6
0.4
1.0E-05
0.2
30A
20A
10A
5A
IS=1A
1.0E-06
0 50 100 150 200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
50 20
45 di/dt=1000A/us
40
125ºC
16
35
30
25ºC
12
25
20 Qrr
15
125ºC
8
10 Irm
5
25ºC
4
00
0 5 10 15 20 25 30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
50 15
Is=20A
40
30
12
125ºC
25ºC 9
20
Qrr
10
125ºC
25ºC
6
3
Irm
00
0 200 400 600 800 1000 1200
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
0
0 50 100 150 200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
12 2.4
di/dt=1000A/us
11
125ºC
2.1
10 1.8
9
25ºC
1.5
8 trr
1.2
7
6S
25ºC
0.9
0.6
5
125ºC
0.3
4 0.0
0 5 10 15 20 25 30
Is (A)
Figure 15: Diode Reverse Recovery Time and Soft
Coefficient vs. Conduction Current
18
125ºC
16
14 25ºC
12
Is=20A
2.5
2.0
1.5
10
25ºC
8
125ºC
6
trr 1.0
S
0.5
4 0.0
0 200 400 600 800 1000 1200
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.





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