|
|
Número de pieza | 2N5551 | |
Descripción | SILICON NPN TRANSISTORS | |
Fabricantes | CENTRAL SEMICONDUCTOR | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N5551 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! 2N5550
2N5551
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5550 and
2N5551 are silicon NPN transistors designed for high
voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Continuous Collector Current
VEBO
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
Thermal Resistance
TJ, Tstg
JA
Thermal Resistance
JC
2N5550
2N5551
160 180
140 160
6.0
600
625
1.0
-65 to +150
200
125
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5550
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
ICBO
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hfe
fT
Cob
Cib
NF
VCB=100V
VCB=120V
VCB=100V, TA=100°C
VCB=120V, TA=100°C
VEB=4.0V
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=250μA,
RS=1.0Ω, f=10Hz to 15.7kHz
- 100
--
- 100
--
- 50
160 -
140 -
6.0 -
- 0.15
- 0.25
- 1.0
- 1.2
60 -
60 250
20 -
50 200
100 300
- 6.0
- 30
- 10
2N5551
MIN MAX
--
- 50
--
- 50
- 50
180 -
160 -
6.0 -
- 0.15
- 0.20
- 1.0
- 1.0
80 -
80 250
30 -
50 200
100 300
- 6.0
- 20
UNITS
nA
nA
μA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
- 8.0 dB
R1 (2-December 2014)
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet 2N5551.PDF ] |
Número de pieza | Descripción | Fabricantes |
2N5550 | mplifier Transistors(NPN Silicon) | ON Semiconductor |
2N5550 | NPN high-voltage transistors | NXP Semiconductors |
2N5550 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung semiconductor |
2N5550 | NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications | Semtech Corporation |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |