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PDF 2N5550 Data sheet ( Hoja de datos )
| Número de pieza | 2N5550 | |
| Descripción | SILICON NPN TRANSISTORS | |
| Fabricantes | CENTRAL SEMICONDUCTOR | |
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Hay una vista previa y un enlace de descarga de 2N5550 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2N5550
2N5551
SILICON
NPN TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5550 and
2N5551 are silicon NPN transistors designed for high
voltage amplifier applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Continuous Collector Current
VEBO
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
Thermal Resistance
TJ, Tstg
JA
Thermal Resistance
JC
2N5550
2N5551
160 180
140 160
6.0
600
625
1.0
-65 to +150
200
125
UNITS
V
V
V
mA
mW
W
°C
°C/W
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5550
SYMBOL TEST CONDITIONS
MIN MAX
ICBO
ICBO
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
hFE
hfe
fT
Cob
Cib
NF
VCB=100V
VCB=120V
VCB=100V, TA=100°C
VCB=120V, TA=100°C
VEB=4.0V
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=250μA,
RS=1.0Ω, f=10Hz to 15.7kHz
- 100
--
- 100
--
- 50
160 -
140 -
6.0 -
- 0.15
- 0.25
- 1.0
- 1.2
60 -
60 250
20 -
50 200
100 300
- 6.0
- 30
- 10
2N5551
MIN MAX
--
- 50
--
- 50
- 50
180 -
160 -
6.0 -
- 0.15
- 0.20
- 1.0
- 1.0
80 -
80 250
30 -
50 200
100 300
- 6.0
- 20
UNITS
nA
nA
μA
μA
nA
V
V
V
V
V
V
V
MHz
pF
pF
- 8.0 dB
R1 (2-December 2014)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2N5550.PDF ] | |
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