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PDF QM3003M3 Datasheet ( Hoja de datos )

Número de pieza QM3003M3
Descripción P-Ch 30V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo

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QM3003M3 Hoja de datos, Descripción, Manual
QM3003M3
General Description
The QM3003M3 is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3003M3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Absolute Maximum Ratings
P-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS
-30V
RDSON
20m
ID
-32A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
PRPAK3X3 Pin Configuration
D
S SSG
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s Steady State
-30
±20
-32
-20
-12.2
-7.7
-9.8 -6.2
-65
176
-38
29
4.2 1.67
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
75
30
4.32
Unit
/W
/W
/W
Rev A.01 D042711

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