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PDF QM3001V Data sheet ( Hoja de datos )

Número de pieza QM3001V
Descripción P-Ch 30V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo



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QM3001V
P-Ch 30V Fast Switching MOSFETs
General Description
The QM3001V is the highest performance trench
P-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications .
The QM3001V meet the RoHS and Green Product
requirement , with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z Green Device Available
Product Summery
BVDSS
-30V
RDSON
52m
ID
-3.9A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter
z Networking DC-DC Power System
z Load Switch
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
PD@TA=70
TSTG
TJ
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ -10V1
Continuous Drain Current, VGS @ -10V1
Pulsed Drain Current2
Total Power Dissipation3
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Rating
10s Steady State
-30
±20
-4.5 -3.9
-3.5 -3.1
-20
1.5 1.1
0.94 0.73
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
Typ.
---
---
---
Max.
110
85
70
Unit
/W
/W
/W
Rev A.03 D101811

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