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PDF IN25AA020N Data sheet ( Hoja de datos )
| Número de pieza | IN25AA020N | |
| Descripción | NONVOLATILE ELECTRICALLY ERASABLE PROM | |
| Fabricantes | Integral | |
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IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
NONVOLATILE ELECTRICALLY ERASABLE PROM WITH SERIAL
PERIPHERAL INTERFACE (SPI).
DESCRIPTION
The IN25АА020N/D are a 2K(256x8) serial Electrically Erasable PROM with SPI interface.
*The IN25АА040N/D are a 4K (512x8) serial Electrically Erasable PROM with SPI interface (SPI).
The ICs is purposed for reading, writing & nonvolatile data storage in electronic units with SPI interface. ICs
are realized in SO-8 (MS-012АA) and DIP-8 (MS-001BA)
FEATURES
- Data capacity, QINF:
for IN25АА020N, IN25АА020D
for IN25АА040N, IN25АА040D
2048 bit,
4096 bit;
- Maximum clock frequency, fC:
for 4,5 V ≤ UCC ≤ 5,5 V
for 2,5 V ≤ UCC ≤ 5,5 V
for 1,8 V ≤ UCC ≤ 5,5 V
- Maximum stand-by current, ICC:
for UCC = 5,5 V, UIL = 0 V, UIH = UCC
for UCC = 2,5 V, UIL = 0 V, UIH = UCC
3 MHz;
2 MHz;
1 MHz;
5,0 uA
1,0 uA;
- Maximum read current, IOCCR :
for UCC = 5,5 В, fC = 3,0 МГц, SO pin is not loaded .…1,0 mA,
for UCC = 2,5 В, fC = 2,0 МГц, SO pin is not loaded …..0,5 mA;
- Maximum write current, IOCCW :
for UCC = 5,5 V
5,0 mA;
for UCC = 2,5 V
3,0 mA;
- Byte & page (16 bytes) data write modes are available;
- Endurance NE/W, …...1000000 cycles;
- Write protection block protect none, 1/4, 1/2, or all of storage
array;
- Power on/off data protection circuitry;
- Supply voltage UCC 1,8 … 5,5 V;
- Temperature range -40 … +85°C.
- 100 years non-volatile data retention time
N SUFFIX
DIP
8
1 D SUFFIX
8 SOIC
1
Pin
Name
CS
SO
WP
GND
SI
SCK
HOLD
VCC
Function
Chip Select
Serial Data Output
Write protection
Ground
Serial Data Input
Clock Input
Hold input *
Power Supply
PIN FUNCTIONS
CS 01
SO 02
WP 03
GND 04
08 Vcc
07 HOLD
06 SCK
05 SI
Ver.00/11.07.2008
1 IN25AA020(040)-TSe.doc
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1 page  
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
Data read sequence
CS
SCK
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Instruction
Lower address byte
SI 0 0 0 0 A8 0 1 1 A7 6 5 4 3 2 1 A0
SO High-Z
Output data
7 6 5 43 2 1 0
There are six 8-bit instructions available for executing of read/write operation. The feature
of IN25AA040N, IN25AA040D with 4K capacity is that higher address byte (А8) is transmitted by
5th bit of data read/write instruction , for IN25AA020N, IN25AA020D with 2K capacity 5th bit of
instruction (A8) is ignored.
Enable/disable instructions а) “Write enable” - WREN & b) “Write disable” - WRDI
CS CS
SCK
01 2 3 4 5 6 7
SCK
01 2 3 4 5 6 7
SI 0 0 0 0 0 1 1
SI 0 0 0 0 0 1 10 0
SO High-Z
a)
High-Z
SO
b)
The powers up set ICs in the write disable state. For writing operation after power-up or
after an WRDI (write disable) instruction, WREN (write enable) instruction must be issued.
Any read/write operation can be executed on condition that CS =0 (enable signal) , high level on
CS pin switch IC to standby mode. Already intiated programming cycle will be comleted inde-
pendently from CS signal. A low to high transition on CS after a valid write sequence initiates an
internal write cycle.
Ver.00/11.07.2008
5 IN25AA020(040)-TSe.doc
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5 Page 
IN25АА020N, IN25АА020D, IN25АА040N, IN25АА040D
IN25AA020 Die dimension & contact pad location
Die thickness 0,46±0,02 mm.
Pad location table
Pad number
01
Coordinates (left bottom corner), mm
ХY
0,346
1,555
02
0,158
1,408
03
0,146
0,133
04
0,309
0,133
05
1,110
0,127
06
1,365
0,128
07
1,359
1,554
08
0,983
1,555
Note: Contact pad coordinates and dimensions 0,092 х 0,092 mm are indicated according metallization
layer
Ver.00/11.07.2008
11 IN25AA020(040)-TSe.doc
1711616
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IN25AA020N.PDF ] | |
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