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PDF IRF7341QPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7341QPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Benefits
• Advanced Process Technology
• ÿDual N-Channel MOSFET
• ÿUltra Low On-Resistance
• ÿ175°C Operating Temperature
• ÿRepetitive Avalanche Allowed up to Tjmax
• ÿLead-Free
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET’s are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
The 175°C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of power
applications. This dual, surface mount SO-8 can dramatically
reduce board space and is also available in Tape & Reel.
PD - 96108A
IRF7341QPbF
HEXFET® Power MOSFET
VDSS
55V
RDS(on) max
0.050@VGS = 10V
0.065@VGS = 4.5V
ID
5.1A
4.42A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
TJ , TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction and Storage Temperature Range
Thermal Resistance
Parameter
Max.
RθJA
Maximum Junction-to-Ambient
www.irf.com
Max.
55
5.1
4.2
42
2.4
1.7
16
± 20
140
5.1
See Fig. 14, 15, 16
-55 to + 175
Units
62.5
Units
V
A
W
W
mW/°C
V
mJ
A
mJ
°C
°C/W
1
08/03/10
1 page  
IRF7341QPbF
6.0
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125 150
TC , Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
100
5
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF7341QPbF.PDF ] | |
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