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Número de pieza | IRF7316QPBF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P- Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
Description
These HEXFET® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniques to achieve extremely low on-
resistance per silicon area. Additional features
of these HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching
speed and improved repetitive avalanche rating.
These benefits combine to make this design an
extremely efficient and reliable device for use in
a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8
can dramatically reduce board space and is also
available in Tape & Reel.
PD - 96126A
IRF7316QPbF
HEXFET® Power MOSFET
S1 1
G1 2
8 D1
7 D1
VDSS = -30V
S2 3
6 D2
G2 4
5 D2 RDS(on) = 0.058Ω
Top View
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
-30
± 20
-4.9
-3.9
-30
-2.5
2.0
1.3
140
Avalanche Current
IAR -2.8
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
dv/dt
0.20
-5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
www.irf.com
Symbol
RθJA
Limit
62.5
Units
°C/W
1
08/02/10
1 page IRF7316QPbF
1400
1200
1000
800
600
VGS = 0V
f = 1 MHz
Ciss = Cgs + Cgd + Cds
Crss = Cgd
Coss = Cds + Cgd
SHORTED
Ciss
Coss
400 Crss
200
0A
1 10 100
- VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
20 ID = -4.9A
16
VDS =-15V
12
8
4
0
0 10 20 30 40
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet IRF7316QPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF7316QPBF | Power MOSFET ( Transistor ) | International Rectifier |
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