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PDF IRF7307QPBF Data sheet ( Hoja de datos )

Número de pieza IRF7307QPBF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF7307QPBF Hoja de datos, Descripción, Manual

IRF7307QPbF
l Advanced Process Technology
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
l Surface Mount
G1 2
7 D1
l Available in Tape & Reel
l 150°C Operating Temperature
S2 3
6 D2
VDSS
20V
-20V
l Lead-Free
G2 4
5 D2
P-CHANNEL MOSFET
Description
Top View
RDS(on) 0.050Ω 0.090Ω
These HEXFET® Power MOSFET's in a Dual SO-8
package utilize the lastest processing techniques to
achieve extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to
make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability
making it ideal in a variety of power applications. This
SO-8
dual, surface mount SO-8 can dramatically reduce
board space and is also available in Tape & Reel.
Base Part Number
IRF7307QPbF
IRF7307QPbF
Package Type
SO-8
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7307QPbF
IRF7307QTRPbF
EOL Notice
EOL 529
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
10 Sec. Pulse Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient„
Max.
N-Channel
P-Channel
5.7
5.2
4.1
21
2.0
0.016
± 12
5.0
-55 to + 150
-4.7
-4.3
-3.4
-17
-5.0
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
Max.
62.5
Units
°C/W
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September 3, 2014

1 page




IRF7307QPBF pdf
100 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
IRF7307QPbF
P-Channel
100 VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1.5V
0.1
0.01
20μs PULSE WIDTH
TJ = 25°C
A
0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
1
0.1
1.5
VDS = -15V
20μs PULSE WIDTH
2.0 2.5 3.0 3.5 4.0 4.5 5.0A
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
1500
1000
500
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
Crss
0A
1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 16. Typical Capacitance Vs.
Drain-to-Source Voltage
5 www.irf.com © 2014 International Rectifier
1 -1.5V
0.1
0.01
20μs PULSE WIDTH
TJ = 150°C
A
0.1 1 10 100
-VDS , Drain-to-Source Voltage (V)
Fig 13. Typical Output Characteristics
2.0 ID = -3.6A
1.5
1.0
0.5
0.0
-60
VGS = -4.5V A
-40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
10 I D = -2.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
0 SEE FIGURE 22 A
0 5 10 15 20 25
QG , Total Gate Charge (nC)
Fig 17. Typical Gate Charge Vs.
Gate-to-Source Voltage
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September 3, 2014

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IRF7307QPBF arduino
IRF7307QPbF
Qualification information
Qualification level
Moisture Sensitivity Level
RoHS compliant
I ndus tr ial
(per JEDE C JE S D47F †† guidelines)
SO-8
MS L1
(per JEDE C J-S T D-020D†† )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
9/3/2014
Comment
Updated data sheet based on corporate template.
Added Qual level on page 11.
Added ordering information and updated to reflect the End-Of-life (EOL) of the Tube option (EOL notice #529) on page1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
September 3, 2014

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