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PDF IRF7304QPBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7304QPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 96104A
IRF7304QPbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dual P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l 150°C Operating Temperature
l Lead-Free
S1
G1
S2
G2
Description
These HEXFET® Power MOSFET's in a Dual
SO-8 package utilize the lastest processing
techniquestoachieveextremelylow on-resistance
per silicon area. Additional features of these
HEXFET Power MOSFET's are a 150°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating. These
benefits combine to make this design an extremely
efficient and reliable device for use in a wide
variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics and dual MOSFET die
capability making it ideal in a variety of power
applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also
available in Tape & Reel.
HEXFET® Power MOSFET
1 8 D1
2 7 D1
3 6 D2
4 5 D2
Top View
VDSS = -20V
RDS(on) = 0.090Ω
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Max.
-4.7
-4.3
-3.4
-17
2.0
0.016
±12
-5.0
-55 to + 150
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient
Typ.
Max.
62.5
Units
°C/W
www.irf.com
1
08/02/10
1 page  
IRF7304QPbF
5.0
4.0
3.0
2.0
1.0
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.0001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.001
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
100
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