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PDF IRF7103QPbF Data sheet ( Hoja de datos )
| Número de pieza | IRF7103QPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96101C
IRF7103QPbF
Benefits
l Advanced Process Technology
l Dual N-Channel MOSFET
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Description
This HEXFET® Power MOSFET's in a Dual SO-8 package
utilize the lastest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of
these HEXFET Power MOSFET's are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine to make
this design an extremely efficient and reliable device for use
in a wide variety of applications.
VDSS
50V
HEXFET® Power MOSFET
RDS(on) max (mW)
130@VGS = 10V
200@VGS = 4.5V
ID
3.0A
1.5A
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
SO-8
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it
ideal in a variety of power applications. This dual, surface
mount SO-8 can dramatically reduce board space and is
also available in Tape & Reel.
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
Continuous Drain Current, VGS @ 4.5V
cContinuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
ePower Dissipation
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
fSingle Pulse Avalanche Energy
cAvalanche Current
hRepetitive Avalanche Energy
gPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max.
3.0
2.5
25
2.4
16
± 20
22
See Fig. 16c, 16d, 19, 20
12
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
RθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
20
62.5
Units
°C/W
www.irf.com
1
08/02/10
1 page  
IRF7103QPbF
3.0
2.4
1.8
1.2
0.6
0.0
25
50 75 100 125 150
TC , Case Temperature ( °C)
175
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
D = 0.50
10 0.20
0.10
0.05
0.02
1 0.01
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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| PDF Descargar | [ Datasheet IRF7103QPbF.PDF ] | |
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