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PDF FDS9933BZ Data sheet ( Hoja de datos )
| Número de pieza | FDS9933BZ | |
| Descripción | Dual P-Channel 2.5V Specified PowerTrench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
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March 2008
FDS9933BZ
Dual P-Channel 2.5V Specified PowerTrench® MOSFET
tm
-20V, -4.9A, 46mΩ
Features
General Description
Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A
Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A
Low gate charge (11nC typical).
High performance trench technology for extremely low rDS(on).
HBM ESD protection level >3kV (Note 3).
RoHS Compliant
These P-Channel 2.5V specified MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Battery Charging
Load Switching
D2
D2
D1
D1
Pin 1
G2
S2
G1
S1
SO-8
D2 5
D2 6
D1 7
D1 8
Q 12
Q 21
4 G2
3 S2
2 G1
1 S1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25°C
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±12
-4.9
-30
1.6
0.9
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
40
78
°C/W
Device Marking
FDS9933BZ
Device
FDS9933BZ
Package
SO-8
Reel Size
330mm
Tape Width
12mm
Quantity
2500 units
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
10-3
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 135oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA+ TA
10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
100
1000
©2008 Fairchild Semiconductor Corporation
FDS9933BZ Rev.C
5
www.fairchildsemi.com
5 Page | ||
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| PDF Descargar | [ Datasheet FDS9933BZ.PDF ] | |
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