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PDF FDMJ1032C Data sheet ( Hoja de datos )

Número de pieza FDMJ1032C
Descripción Dual N & P-Channel PowerTrench MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FDMJ1032C
Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 20V, 3.2A, 90mP-Channel: -20V, -2.5A, 160m
September 2007
tm
Features
Q1: N-Channel
„ Max rDS(on) = 90mat VGS = 4.5V, ID = 3.2A
„ Max rDS(on) = 130mat VGS = 2.5V, ID = 2.5A
Q2: P-Channel
„ Max rDS(on) = 160mat VGS = -4.5V, ID = -2.5A
„ Max rDS(on) = 230mat VGS = -2.5V, ID = -2.0A
„ Max rDS(on) = 390mat VGS = -1.8V, ID = -1.0A
„ Low gate charge, high power and current handling
capability
General Description
This dual N and P-Channel enhancement mode Power
MOSFET is produced using Fairchild Semiconductor’s
advanced PowerTrench® process that has been especially
tailored to minimize on-state resistance and yet maintain
superior switching performance.
Application
„ Battery management
„ RoHS Compliant
Pin 1
S1 S2 G2
Bottom Drain Contact
D1 D2
G1 S1 S2
SC-75 MicroFET
S2 4
S1 5
G1 6
3 G2
2 S2
1 S1
Bottom Drain Contact
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
TA = 25°C
TA = 25°C (Note 1a)
TA = 25°C (Note 1b)
Thermal Characteristics
Q1 Q2
20 -20
±12 ±8
3.2 -2.5
12 -12
1.4
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient, Single Operation
Thermal Resistance, Junction to Ambient, Single Operation
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
89
182
°C/W
Device Marking
032
Device
FDMJ1032C
Package
SC-75 MicroFET
Reel Size
7”
Tape Width
8mm
Quantity
3000 units
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
1
www.fairchildsemi.com

1 page




FDMJ1032C pdf
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
4.5
ID = 3.2A
3.6
2.7
1.8
VDD = 5V
VDD = 10V
VDD = 15V
0.9
0.0
0.0
0.5 1.0 1.5
Qg, GATE CHARGE(nC)
2.0
2.5
Figure 7. Gate Charge Characteristics
600
Ciss
100 Coss
Crss
f = 1MHz
VGS = 0V
10
0.1 1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. Capacitance vs Drain
to Source Voltage
4
3
VGS = 4.5V
2
VGS = 2.5V
1
RθJA = 89oC/W
0
25 50 75 100 125
TA, AMBIENT TEMPERATURE (oC)
Figure9. Maximum Continuous Drain
Current vs Ambient Temperature
150
20
10 10µs
100µs
1 1ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
SINGLE PULSE
TJ = MAX RATED
RθJA = 182oC/W
TA = 25oC
1
10
VDS, DRAIN to SOURCE VOLTAGE (V)
10ms
100ms
1s
10s
DC
60
Figure 10. Forward Bias Safe
Operating Area
1000
100
VGS = 4.5V
SINGLE PULSE
TA = 25oC
10
1
0.1
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 11. Single Pulse Maximum Power Dissipation
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
5
www.fairchildsemi.com

5 Page





FDMJ1032C arduino
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and
is not intended to be an exhaustive list of all such trademarks.
ACEx®
Build it Now™
CorePLUS™
CROSSVOLT
Green FPS™
Green FPS™ e-Series™
GTO™
i-Lo
Power247®
POWEREDGE®
Power-SPM™
PowerTrench®
SuperSOT™-8
SyncFET™
The Power Franchise®
CTL™
Current Transfer Logic™
EcoSPARK®
®
Fairchild®
Fairchild Semiconductor®
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
Programmable Active Droop™
QFET®
QS™
QT Optoelectronics™
Quiet Series™
RapidConfigure™
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FPS™
FRFET®
Global Power ResourceSM
MillerDrive™
Motion-SPM™
OPTOLOGIC®
OPTOPLANAR®
®
PDP-SPM™
Power220®
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
TinyPWM™
TinyWire™
µSerDes™
UHC®
UniFET™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury to the user.
2. A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative or In Design
Preliminary
First Production
No Identification Needed Full Production
Obsolete
Not In Production
Definition
tm
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild Semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
©2007 Fairchild Semiconductor Corporation
FDMJ1032C Rev.B
www.fairchildsemi.com

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