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PDF 2N3055 Data sheet ( Hoja de datos )
| Número de pieza | 2N3055 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | NTE | |
| Logotipo |  |
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 1. PDF - NPN Complementary Transistor  Hay una vista previa y un enlace de descarga de 2N3055 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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2N3055
Silicon NPN Power Transistor
Audio Power Amp, Medium Speed Switch
TO−3 Type Package
Description:
The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching
and amplifier applications.
Features:
D DC Current Gain: hFE = 20 − 70 @ IC = 4A
D Collector−Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A
D Excellent Safe Operating Area
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter−Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7A
Total
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. . . . 115W
0.657W/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +200C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.52C/W
Note 1. Maximum Ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and
are not valid simultaneously. If these limits are exceeded, device functional operation is not
implied, damage may occur and reliability may be affected.
Electrical Characteristics: (TC =+25C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
OFF Characteristics
Collector−Emitter Sustaining Voltage
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus)
VCER(sus)
ICEO
ICEX
IEBO
IC = 200mA, IB = 0, Note 2
IC = 200mA, RBE = 100, Note 2
VCE = 30V, IB = 0
VCE = 100V, VBE(off) = 1.5V
VCE = 100V, VBE(off) = 1.5V, TC = +150C
VBE = 7V, IC = 0
60
70
−
−
−
−
−−V
−−V
− 0.7 mA
− 1.0 mA
− 5.0 mA
− 5.0 mA
Note 2. Pulse Test: Pulse Width 300s. Duty Cycle 2%.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N3055.PDF ] | |
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