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PDF QM6016F Data sheet ( Hoja de datos )

Número de pieza QM6016F
Descripción N-Ch 60V Fast Switching MOSFETs
Fabricantes UBIQ 
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No Preview Available ! QM6016F Hoja de datos, Descripción, Manual

QM6016F
N-Ch 60V Fast Switching MOSFETs
General Description
The QM6016F is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM6016F meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
60V
RDSON
12m
ID
38A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TO220F Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
1
G DS
Rating
60
±20
38
24
9.2
7.5
95
123
38
34.7
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Typ.
---
---
Max.
62
3.6
Unit
/W
/W
Rev A.02 D091611

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