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PDF QM3016M6 Data sheet ( Hoja de datos )

Número de pieza QM3016M6
Descripción N-Ch 30V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo



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QM3016M6
N-Ch 30V Fast Switching MOSFETs
General Description
The QM3016M6 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3016M6 meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
Product Summery
BVDSS
30V
RDSON
4m
ID
108A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
PRPAK56 Pin Configuration
D
Absolute Maximum Ratings
SSSG
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
IDM
EAS
IAS
PD@TC=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
108
68
216
317
53.8
69
-55 to 175
-55 to 175
Units
V
V
A
A
A
mJ
A
W
Thermal Data
Symbol
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Case1
Typ.
---
---
Max.
62
1.8
Unit
/W
/W
Rev A.01 D101509
1

1 page





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