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PDF QM3016AD Data sheet ( Hoja de datos )

Número de pieza QM3016AD
Descripción N-Ch 30V Fast Switching MOSFETs
Fabricantes UBIQ 
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No Preview Available ! QM3016AD Hoja de datos, Descripción, Manual

QM3016AD
General Description
N-Ch 30V Fast Switching MOSFETs
Product Summery
The QM3016AD is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
The QM3016AD meet the RoHS and Green
Product requirement 100% EAS guaranteed with
full function reliability approved.
Features
BVDSS
30V
RDSON
4m
ID
100A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
TO252 Pin Configuration
D
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S
G
Rating
10s Steady State
30
±20
100
70
31 20
26 16
200
317
54
62.5
6 2.42
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case
1
Typ.
---
---
---
Max.
62
25
2.4
Unit
/W
/W
/W
Rev A.01 D061511

1 page





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