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PDF 80N70F4 Data sheet ( Hoja de datos )
| Número de pieza | 80N70F4 | |
| Descripción | STP80N70F4 | |
| Fabricantes | STMicroelectronics | |
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STP80N70F4
N-channel 68 V, 8.2 mΩ typ., 85 A STripFET™ DeepGATE™
Power MOSFET in TO-220 package
Datasheet — production data
Features
Order code
STP80N70F4
VDSS
68 V
RDS(on) max
< 9.8 mΩ
ID
85 A
■ N-channel enhancement mode
■ 100% avalanched rated
■ Low gate charge
■ Very low on-resistance
Application
Switching applications
Description
This device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
and is specially designed to minimize on-state
resistance to provide superior switching
performance.
3
2
1
TO-220
Figure 1. Internal schematic diagram
$
'
3
!-V
Table 1. Device summary
Order code
STP80N70F4
Marking
80N70F4
Package
TO-220
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 18377 Rev 2
1/12
www.st.com
12
1 page  
STP80N70F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 85 A, VGS = 0
ISD = 80 A,
VDD = 54.4 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Min. Typ. Max Unit
- 85 A
- 340 A
- 1.5 V
55
- 130
4
ns
nC
A
Doc ID 18377 Rev 2
5/12
5 Page 
STP80N70F4
5 Revision history
Revision history
Table 9. Document revision history
Date
Revision
Changes
12-Jan-2011
17-Dec-2012
1 First release.
Document status promoted from preliminary data to production data.
2
Section 2.1: Electrical characteristics (curves) has been added.
Doc ID 18377 Rev 2
11/12
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet 80N70F4.PDF ] | |
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