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PDF MDV1525 Data sheet ( Hoja de datos )
| Número de pieza | MDV1525 | |
| Descripción | Single N-channel Trench MOSFET | |
| Fabricantes | MagnaChip | |
| Logotipo |  |
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MDV1525
Single N-channel Trench MOSFET 30V, 24A, 10.1mΩ
General Description
The MDV1525 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1525 is suitable for DC/DC converter and
general purpose applications.
Features
VDS = 30V
ID = 24A @VGS = 10V
RDS(ON)
< 10.1mΩ @VGS = 10V
< 14.0mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
DD DD
DD DD
D
S SSG
GS SS
PDFN33
Absolute Maximum Ratings (Ta = 25oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current (1)
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy (2)
Junction and Storage Temperature Range
TC=25oC (Silicon limited)
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
TC=25oC
TC=70oC
TA=25oC
TA=70oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
May. 2011. Version1.2
1
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
30
±20
37.2
24
24
13.8(3)
11.1(3)
60
24.5
15.6
3.4(3)
2.2(3)
48
-55~150
Unit
V
V
A
A
W
mJ
oC
Symbol
RθJA
RθJC
Rating
36
5.1
Unit
oC/W
MagnaChip Semiconductor Ltd.
1 page  
10
※ Note : ID = 11A
8
6
4
2
0
0 3 6 9 12
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
15
1200
900
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
300 Coss
Crss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0 5 10 15 20 25
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
30
Operation in This Area
is Limited by R DS(on)
102
10 ms
100 ms
101 1s
10s
DC
100
Single Pulse
10-1
TJ=Max rated
TC=25℃
10-1 100 101
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
102
50
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature [℃]
Fig.10 Maximum Drain Current vs.
Case Temperature
101
D=0.5
0.2
100
0.1
0.05
0.02
10-1 0.01
single pulse
10-2
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-3
10-4 10-3 10-2 10-1 100 101 102 103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
May. 2011. Version1.2
5 MagnaChip Semiconductor Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet MDV1525.PDF ] | |
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