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PDF QM3002AN3 Datasheet ( Hoja de datos )

Número de pieza QM3002AN3
Descripción N-Ch 30V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo

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QM3002AN3 Hoja de datos, Descripción, Manual
QM3002AN3
General Description
The QM3002AN3 is the highest performance
trench N-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications .
The QM3002AN3 meet the RoHS and Green
Product requirement , 100% EAS guaranteed
with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available
N-Ch 30V Fast Switching MOSFETs
Product Summery
BVDSS
30V
RDSON
18mΩ
ID
28A
Applications
z High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
DFN3X3 Pin Configuration
D
Absolute Maximum Ratings
S SSG
Symbol
VDS
VGS
ID@TC=25
ID@TC=100
ID@TA=25
ID@TA=70
IDM
EAS
IAS
PD@TC=25
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Continuous Drain Current, VGS @ 10V1
Pulsed Drain Current2
Single Pulse Avalanche Energy3
Avalanche Current
Total Power Dissipation4
Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
Rating
10s Steady State
30
±20
28
18
11.8 7.5
9.5 6
65
72
20
20.8
4.2 1.67
-55 to 150
-55 to 150
Units
V
V
A
A
A
A
A
mJ
A
W
W
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Ambient 1 (t 10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
75
30
6
Unit
/W
/W
/W
Rev A.02 D070711

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Hoja de datos destacado

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