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PDF QM8205V Data sheet ( Hoja de datos )
| Número de pieza | QM8205V | |
| Descripción | Dual N-Ch Fast Switching MOSFETs | |
| Fabricantes | UBIQ | |
| Logotipo |  |
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General Description
The QM8205V is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM8205V meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
QM8205V
Dual N-Ch Fast Switching MOSFETs
Product Summery
BVDSS
20V
RDSON
25mΩ
ID
6A
Applications
z High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System
z Load Switch
TSOP6 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Rating
20
±8
6
4.8
30
1.1
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
Parameter
Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Ambient 1 (t ≤10s)
Thermal Resistance Junction-Case1
1
Typ.
---
---
---
Max.
110
85
70
Unit
℃/W
℃/W
℃/W
Rev A.01 D090711
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet QM8205V.PDF ] | |
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