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PDF 21N05L Data sheet ( Hoja de datos )
| Número de pieza | 21N05L | |
| Descripción | SPU21N05L | |
| Fabricantes | Siemens | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 21N05L (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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SPD21N05L
SPU21N05L
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche-rated
• dv/dt rated
• 175°C operating temperature
Pin 1
G
Pin 2
D
Pin 3
S
Type
SPD21N05L
SPU21N05L
VDS
55 V
55 V
ID
20 A
20 A
RDS(on)
0.07 Ω
0.07 Ω
Maximum Ratings
Parameter
Continuous drain current
TC = 25 °C
TC = 100 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 20 A, VDD = 25 V, RGS = 25 Ω
L = 450 µH, Tj = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Reverse diode dv/dt
IS = 20 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Package
P-TO252
P-TO251
Symbol
ID
IDpuls
EAS
IAR
EAR
dv/dt
VGS
Ptot
Ordering Code
Q67040 - S4137- A2
Q67040 - S4131 - A2
Values
20
14
80
90
20
5.5
6
± 14
55
Unit
A
mJ
A
mJ
kV/µs
V
W
Semiconductor Group
1
29/Jan/1998
1 page  
SPD21N05L
SPU21N05L
Power dissipation
Ptot = ƒ(TC)
60
W
50
P
tot
45
40
35
30
25
20
15
10
5
0
0 20 40 60 80 100 120 140 °C 180
TC
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 4 V
22
A
I 18
D
16
14
12
10
8
6
4
2
0
0 20 40 60 80 100 120 140 °C 180
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
10 3
A
I
D
10 2
tp = 28.0µs
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 1
K/W
10 0
Z
thJC
10 -1
10 1
100 µs
10 0
10 0
10 1
1 ms
10 ms
DC V 10 2
VDS
Semiconductor Group
5
10 -2
10 -3
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10 -4
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
29/Jan/1998
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 21N05L.PDF ] | |
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