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PDF QM2502S Data sheet ( Hoja de datos )

Número de pieza QM2502S
Descripción Dual N-Ch 20V Fast Switching MOSFETs
Fabricantes UBIQ 
Logotipo UBIQ Logotipo



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QM2502S
Dual N-Ch 20V Fast Switching MOSFETs
General Description
The QM2502S is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
The QM2502S meet the RoHS and Green Product
requirement with full function reliability approved.
Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent Cdv/dt effect decline
z Green Device Available
Product Summery
BVDSS
20V
RDSON
18.5m
ID
7A
Applications
z Power management in portable and battery
operated products
z DC-DC Power System
z Load Switch
SOP8 Pin Configuration
D1 D1 D2 D2
Absolute Maximum Ratings
Symbol
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V1
Continuous Drain Current, VGS @ 4.5V1
Pulsed Drain Current2
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
S1 G1S2 G2
Rating
20
±12
7
5.6
35
1.5
-55 to 150
-55 to 150
Thermal Data
Symbol
RθJA
RθJA
Parameter
Thermal Resistance Junction-ambient 1 (Steady State)
Thermal Resistance Junction-ambient 1 (t<10S)
Typ.
---
---
Max.
85
25
Units
V
V
A
A
A
W
Unit
/W
/W
Rev A.02 D051611
1

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