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PDF B14NK60Z Data sheet ( Hoja de datos )

Número de pieza B14NK60Z
Descripción STB14NK60Z
Fabricantes STMicroelectronics 
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No Preview Available ! B14NK60Z Hoja de datos, Descripción, Manual

STB14NK60Z,
STP14NK60Z, STW14NK60Z
N-channel 600 V, 0.45 Ω typ., 13.5 A SuperMESH™
2
Power MOSFETs in I PAK, TO-220 and TO-247 packages
Datasheet - obsolete product
Features
TAB
TAB
Order codes
VDS
RDS(on)
max.
ID
PTOT
123
t(s)I2PAK
3
2
1
TO-220
lete ProducTO-247
bsoFigure 1. Internal schematic diagram
- OD(2, TAB)
duct(s)G(1)
solete ProS(3)
Ob AM01476v1
STB14NK60Z-1
STP14NK60Z
600 V
0.5 Ω 13.5 A 160 W
STW14NK60Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order codes
STB14NK60Z-1
STP14NK60Z
STW14NK60Z
Table 1. Device summary
Marking
Package
B14NK60Z
2
I PAK
P14NK60Z
TO-220
W14NK60Z
TO-247
Packaging
Tube
May 2014
This is information on a discontinued product.
DocID8984 Rev 8
1/19
www.st.com

1 page




B14NK60Z pdf
STB14NK60Z, STP14NK60Z, STW14NK60Z
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=300 V, ID=6 A,
RG=4.7 Ω, VGS=10 V
(see Figure 17)
- 26 - ns
- 18 - ns
- 62 - ns
- 13 - ns
tr(Voff) Off-voltage rise time
tf Fall time
VDD=480 V, ID=12A,
RG=4.7Ω, VGS=10V
- 12 - ns
- 9.5 - ns
tc Cross-over time
(see Figure 19)
- 22 - ns
uct(s)Symbol
Table 8. Source drain diode
Parameter
Test conditions
rodISD
(1)
PISDM
te(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=12 A, VGS=0
letrr
soQrr
bIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12 A,
di/dt = 100 A/μs,
VDD=50 V
- Otrr
t(s)Qrr
cIRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=12 A,
di/dt = 100 A/μs,
VDD=50 V, Tj=150 °C
u1. Pulse width limited by safe operating area
Obsolete Prod2. Pulsed: pulse duration=300μs, duty cycle 1.5%
Min Typ. Max Unit
- 12 A
- 48 A
- 1.6 V
- 490
ns
- 4.7
μC
- 19.3
A
- 664
ns
- 6.8
μC
- 20.5
A
DocID8984 Rev 8
5/19
19

5 Page





B14NK60Z arduino
STB14NK60Z, STP14NK60Z, STW14NK60Z
4 Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com.
®
ECOPACK is an ST trademark.
Obsolete Product(s) - Obsolete Product(s)
DocID8984 Rev 8
11/19
19

11 Page







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