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PDF SK220A Data sheet ( Hoja de datos )

Número de pieza SK220A
Descripción 2.0 Ampere Surface Mount Schottky Barrier Rectifier Diodes
Fabricantes Thinki Semiconductor 
Logotipo Thinki Semiconductor Logotipo



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No Preview Available ! SK220A Hoja de datos, Descripción, Manual

SK22A thru SK220A
®
Pb Free Plating Product
Features
SK22A thru SK220A
Pb
2.0 Ampere Surface Mount Schottky Barrier Rectifier Diodes
SMA/DO-214AC
Unit: inch (mm)
For surface mounted application
Metal to silicon rectifier, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
High temperature soldering:
260oC / 10 seconds at terminals
.181(4.60)
.157(4.00)
.012(.305)
.006(.152)
Mechanical Data
Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 12mm tape per EIA STD RS-481
Weight: 0.093gram
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol SK SK SK SK SK SK SK SK Units
22A 23A 24A 25A 26A 29A 210A 220A
Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 200 V
Maximum RMS Voltage
VRMS 14 21 28 35 42 63 70 140 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VDC
I(AV)
IFSM
20 30 40 50 60 90 100 200
2.0
V
A
50 A
Maximum Instantaneous Forward Voltage
(Note 1) @ 2.0A
Maximum DC Reverse Current
@ TA =25 oC
at Rated DC Blocking Voltage @ TA =125 oC
VF
IR
0.5
0.5
10
0.7
5.0
0.85 0.95
0.1
2.0
V
mA
mA
Non-repetitive Peak Reverse Avalanche
Energy L=40mH Tj=25 oC max prior to Surge,
Inductive load Switched off
ERSM
20 mJ
Typical Junction Capacitance
Typical Thermal Resistance ( Note 2 )
Operating Temperature Range
Storage Temperature Range
Cj
R θJA
TJ
TSTG
10 50
88
-65 to +125
-65 to +150
-65 to +150
pF
oC/W
oC
oC
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.2” x 0.2”(5.0mm x 5.0mm) Copper Pad Areas.
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/

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