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PDF IRF5851PbF Data sheet ( Hoja de datos )

Número de pieza IRF5851PbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF5851PbF Hoja de datos, Descripción, Manual

l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Low Gate Charge
l Lead-Free
l Halogen-Free
PD-95341A
IRF5851PbF
HEXFET® Power MOSFET
* 
6 
 '
 6
VDSS
N-Ch
20V
P-Ch
-20V
* 
 ' RDS(on) 0.0900.135
Description
These N and P channel MOSFETs from International Rectifier utilize advanced
processing techniques to achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an extremely efficient device for
use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit
board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two
SOT-23 packages in a smaller footprint. Its unique thermal design and
RDS(on) reduction enables an increase in current-handling capability.
TSOP-6
Absolute Maximum Ratings
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Parameter
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient ƒ
www.irf.com
Max.
N-Channel
P-Channel
20 -20
2.7 -2.2
2.2 -1.7
11 -9.0
0.96
0.62
7.7
± 12
-55 to + 150
Units
A
W
mW/°C
V
°C
Typ.
–––
Max.
130
Units
°C/W
1
04/20/10

1 page




IRF5851PbF pdf
N-Channel
IRF5851PbF
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50 75 100 125
TC , Case Temperature ( °C)
150
Fig 9. Maximum Drain Current Vs.
Case Temperature
1000
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
10 0.05
0.02
0.01
1
0.1
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
1
Fig 10. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
10
www.irf.com
5

5 Page





IRF5851PbF arduino
P-Channel
IRF5851PbF
0.24 0.40
0.20
0.16
0.12 ID = -2.2A
0.08
2.0
3.0 4.0 5.0 6.0
-VGS, Gate -to -Source Voltage (V)
7.0
Fig 27. Typical On-Resistance Vs. Gate
Voltage
0.30
VGS = -2.5V
0.20
0.10
0
VGS = -4.5V
2468
-ID , Drain Current (A)
10
Fig 28. Typical On-Resistance Vs. Drain
Current
QGS
VG
QG
QGD
Charge
Fig 29a. Basic Gate Charge Waveform
www.irf.com
Current Regulator
Same Type as D.U.T.
50K
12V .2µF
.3µF
D.U.T.
-
+VDS
VGS
-3mA
IG ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11

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