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PDF IRFB16N50KPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFB16N50KPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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SMPS MOSFET
PD - 95619
IRFB16N50KPbF
Applications
l Switch Mode Power Supply (SMPS)
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency
Circuits
l Lead-Free
Benefits
l Low Gate Charge Qg results in Simple Drive
Requirement
l Improved Gate, Avalanche and Dynamic dv/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
Voltage and Current
l Low RDS(on)
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
cID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃcIAR Avalanche Current
cEAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Document Number: 91096
HEXFET® Power MOSFET
VDSS RDS(on) typ. ID
500V
285m:
17A
S
D
G
TO-220AB
Max.
17
11
68
280
2.3
± 30
11
-55 to + 150
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Units
A
W
W/°C
V
V/ns
°C
Typ.
–––
–––
–––
Max.
310
17
28
Units
mJ
A
mJ
Typ.
–––
0.50
–––
Max.
0.44
–––
62
Units
°C/W
8/2/04
www.vishay.com
1
1 page  
IRFB16N50KPbF
20
15
10
5
0
25
50 75 100 125
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
150
1
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
D = 0.50
0.1 0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91096
www.vishay.com
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| PDF Descargar | [ Datasheet IRFB16N50KPbF.PDF ] | |
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