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PDF SD101AW Datasheet ( Hoja de datos )

Número de pieza SD101AW
Descripción 400mW Schottky Barrier Switching Diode
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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SD101AW Hoja de datos, Descripción, Manual
Pb RoHS
COMPLIANCE
SD101AW - SD101CW
400mW Schottky Barrier Switching Diode
SOD-123
Features
— Low forward voltage drop
— Guard ring construction for transient protection
— Negligible reverse recovery time
Mechanical Data
— Case: SOD-123, plastic
— Polarity: Cathode band
— Terminals: Solderable per MIIL-STD-202,
Method 208
— Marking: Date Code and Type Code or
Date Code only
Type Code: SD101AW S1
SD101BW S2
SD101CW S3
— Weight: 0.01 grams (approx.)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-repetitive Peak Forward Surge Current
@ t 1.0s
@ t = 10uS
Power Dissipation (Note 1)
Thermal Resistance Junction to Ambient Air
(Note 1)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
VRRM
VRWM
VR
VR(RMS)
IFM
SD101AW SD101BW SD101CW
60 50 40
42 35 28
15
Units
V
V
mA
IFSM
50 mA
2.0 A
Pd
RθJA
400 mW
300 oC/W
TJ, TSTG
-65 to + 125
oC
Type Number
Reverse Breakdown Voltage (Note 2)
SD101AW IR=10uA
SD101BW IR=10uA
SD101CW IR=10uA
Peak Reverse Current SD101AW VR=50V
SD101BW VR=40V
SD101CW VR=30V
Forward Voltage Drop SD101AW IF=1.0mA
(Note 2)
SD101BW IF=1.0mA
SD101CW IF=1.0mA
SD101AW IF=15mA
SD101BW IF=15mA
SD101CW IF=15mA
Junction Capacitance
VR=0, f=1.0MHz
SD101AW
SD101BW
SD101CW
Reverse Recovery Time IF=IR=5.0Ma
Irr=0.1 x IR, RL=100Ω
Symbol
V(BR)
IR
VF
Cj
trr
Min
60
50
40
-
-
-
Max
-
200
0.41
0.40
0.39
1.00
0.95
090
2.0
2.1
2.2
1.0
Units
V
nA
V
pF
nS
Notes: 1. Valid Provided that Terminals are Kept at Ambient Temperature.
2. Pulse Test: Pulse width = 300uS, Duty cycle 2%..
Version: A07

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