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PDF 2N7002K Data sheet ( Hoja de datos )

Número de pieza 2N7002K
Descripción N-channel MOSFET
Fabricantes JCST 
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No Preview Available ! 2N7002K Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate MOSFETs
2N7002K N-channel MOSFET
FEATURES
z High density cell design for Low RDSon
z Voltage controlled small signal switch
z Rugged and reliable
z High saturation current capability
z ESD protected up to 2KV
Marking: 72K
MOSFET MAXIMUM RATINGS (Ta = 25°C unless otherwise noted)
Symbol
Parameter
Value
Units
VDS Drain-Source voltage
60 V
ID Drain Current
340 mA
PD Power Dissipation
0.35 W
TJ Junction Temperature
150
Tstg Storage Temperature
-55-150
RθJA
Thermal Resistance fromJunction to Ambient
357
/W
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Equivalent circuit
MOSFET ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ
Static Characteristics
Drain-Source Breakdown Voltage
VDS VGS = 0V, ID =250µA
60
Gate Threshold Voltage*
VGS(th)
VDS =VGS, ID =1mA
1
Zero Gate Voltage Drain Current
IDSS VDS =48V,VGS = 0V
IGSS1
VGS =±20V, VDS = 0V
Gate –Source leakage current
IGSS2
VGS =±10V, VDS = 0V
IGSS3
VGS =±5V, VDS = 0V
Drain-Source On-Resistance*
RDS(on)
VGS = 4.5V, ID =200mA
VGS =10V,ID =500mA
Diode Forward Voltage
VSD VGS=0V, IS=300mA
Recovered charge
Qr
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
30
Max Units
1
±10
±200
±100
5.3
5
1.5
V
V
µA
µA
nA
nA
V
nC
Dynamic Characteristics**
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics**
Turn-On Delay Time
Turn-Off Delay Time
Reverse recovery Time
Ciss
Coss
Crss
VDS =10V,VGS =0V,f =1MHz
td(on)
td(off)
trr
VGS=10V,VDD=50V,RG=50,
RGS=50, RL=250
VGS=0V,IS=300mA,VR=25V,
dls/dt=-100A/µS
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
BVGSO Igs=±1mA (Open Drain)
Notes :
*Pulse Test : Pulse Width 300µs, Duty Cycle 2%.
**These parameters have no way to verify.
40 pF
30 pF
10 pF
10
15
30
ns
ns
ns
±21.5
±30 V
A,Dec,2010

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