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PDF FLL810IQ-4C Data sheet ( Hoja de datos )
| Número de pieza | FLL810IQ-4C | |
| Descripción | L-Band High Power GaAs FET | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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FEATURES
• Push-Pull Configuration
• High Power Output: 80W
• High PAE: 45%.
• Excellent Linearity
• Suitable for class AB operation.
• Hermetically Sealed Package
FLL810IQ-4C
L-Band High Power GaAs FET
DESCRIPTION
The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design
which offers excellent linearity, ease of matching, and greater consistency in
covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely
suited for use in WLL applications as it offers high gain, long term reliability and
ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
PT
Tstg
Tch
Tc = 25°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 12 volts.
2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
136
-65 to +175
+175
Unit
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Symbol
Conditions
Drain Current
IDSS
VDS = 5V, VGS = 0V
Limits
Min. Typ. Max.
-8-
Pinch-Off Voltage
Vp VDS = 5V, IDS = 220mA -0.1 -0.3 -0.5
Gate-Source Breakdown Voltage VGSO IGS = -2.2mA
-5 -
-
Output Power
Linear Gain (Note 1)
Power-Added Efficiency
Drain Current
Pout
GL
ηadd
IDSR
VDS = 12V
f = 3.6 GHz
IDS = 5.0A
Pin = 43.0dBm
48.0 49.0 -
8.5 9.5 -
- 45 -
- 11.5 15.0
Thermal Resistance
Rth Channel to Case
CASE STYLE: IQ
Note 1: The condition for GL is the same as Pout except Pin = 28.0dBm.
- 0.8 1.1
Unit
A
V
V
dBm
dB
%
A
°C/W
Edition 1.1
October 2001
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLL810IQ-4C.PDF ] | |
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