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PDF FLU17ZME1 Data sheet ( Hoja de datos )

Número de pieza FLU17ZME1
Descripción L-Band Medium & High Power GaAs FET
Fabricantes SUMITOMO 
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FLU17ZME1
L-Band Medium & High Power GaAs FET
FEATURES
High Output Power: P1dB=32.5dBm(typ.)
High Gain: G1dB=12.5dB(typ.)
Low Cost Plastic(SMT) Package
Tape and Reel Available
DESCRIPTION
The FLU17ZME1 is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C)
Item
Drain-Source Voltage
Symbol
VDS
Rating
15
Gate-Soutce Voltage
VGS
-5
Total Power Dissipation
PT
8.3
Storage Temperature Tstg -55 to +150
Channel Temperature
Tch
150
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 deg.C)
Unit
V
V
W
deg.C
deg.C
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
VDS
IGF
IGR
Condition
10
9.6
-1.0
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Drain Current
Trans Conductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Symbol
IDSS
gm
Vp
VGSO
Test Conditions
VDS=5V,VGS=0V
VDS=5V,IDS=400mA
VDS=5V,IDS=30mA
IGS=-30µA
Min.
-
-
-1.0
-5
Limit
Typ.
600
300
-2.0
-
Max.
900
-
-3.5
-
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V
f=2.0GHz
IDS=0.6IDSS(Typ.)
31.5 32.5 - dBm
11.5 12.5 - dB
Thermal Resistance
Rth Channel to Case
- 12 15 deg.C/W
CASE STYLE: ZM
G.C.P.:Gain Compression Point
Note1: Product supplied to this specification are 100% DC performance tested.
Note2:The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class II
500 to 1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kohm)
Edition 1.1
Apr. 2012
1

1 page




FLU17ZME1 pdf
FLU17ZME1
L-Band Medium & High Power GaAs FET
@ VDS=10V IDS(DC)=0.6IDSS
IMD vs OUTPUT POWER(2-tone)
W-CDMA 2-CARRIER IMD(ACLR)
0
-10
-20
-30
-40
-50
-60
-70
-80
15 20 25 30 35
2-tone total Pout [dBm ] @ df=+5M Hz
IM 3@ 1.8GHz
IM 5@ 2.0GHz
IM 5@ 1.8GHz
IM 3L dBc
IM 3@ 2.0GHz
IM 5L dBc
*fo=2.1325GHz *f1=2.1475GHz
-25
-30
-35
-40
-45
-50
-55
-60
18 19 20 21 22 23 24 25 26 27 28
2-tone total Pout [dBm ]
IM 3-L
IM 3-U
IM 5-L
IM 5-U
W-CDMA SINGLE CARRIER ACLR
*fo =2.1325GHz
-25
-30
-35
-40
-45
-50
-55
-60
20 21 22 23 24 25 26 27 28 29 30
Ou tp u t Po w e r [d Bm ]
-5M Hz
-10M Hz
+5M Hz
+10M Hz
W-CDMA SINGLE CARRIER CCDF AND GAIN
15
14
13
12
11
10
9
8
7
6
5
18
*fo =2.1325GHz
23 28
Ou tp u t Po w e r [d Bm ]
0.01%
Pe ak
Gain
Note : *All signal are W-CDMA modulation at 3GPP3.4.12-00 BS-1 64ch non clipping.
Edition 1.1
Apr. 2012
5

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