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PDF FLC107WG Data sheet ( Hoja de datos )
| Número de pieza | FLC107WG | |
| Descripción | C-Band Power GaAs FET | |
| Fabricantes | Eudyna Devices | |
| Logotipo |  |
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FEATURES
• High Output Power: P1dB = 30.0dBm(Typ.)
• High Gain: G1dB = 8.0dB(Typ.)
• High PAE: ηadd = 36%(Typ.)
• Proven Reliability
• Hermetic Metal/Ceramic Package
FLC107WG
C-Band Power GaAs FET
DESCRIPTION
The FLC107WG is a power GaAs FET that is designed for general
purpose applications in the C-Band frequency range as it provides
superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts.
2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with
gate resistance of 500Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
15
-5
7.5
-65 to +175
175
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current
Transconductance
IDSS
gm
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 250mA
-
-
Pinch-off Voltage
Vp VDS = 5V, IDS = 20mA -1.0
Gate Source Breakdown Voltage VGSO IGS = -20µA
-5
Limit
Typ. Max.
400 600
200 -
-2.0 -3.5
--
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS = 10V,
IDS = 0.6 IDSS (Typ.),
f = 8 GHz
28.5 30.0 -
7.0 8.0 -
Power-added Efficiency
ηadd
- 36 -
Unit
V
V
W
°C
°C
Unit
mA
mS
V
V
dBm
dB
%
Thermal Resistance
CASE STYLE: WG
Rth Channel to Case
- 16 20
°C/W
G.C.P.: Gain Compression Point
Edition 1.1
July 1999
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet FLC107WG.PDF ] | |
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