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Número de pieza | IRFIB7N50LPbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! PD - 95750
IRFIB7N50LPbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
• Zero Voltage Switching SMPS
VDSS RDS(on) typ. Trr typ. ID
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
500V 320mΩ 85ns 6.8A
• Motor Control applications
• Lead-Free
Features and Benefits
• SuperFast body diode eliminates the need for external
diodes in ZVS applications.
• Lower Gate charge results in simpler drive requirements.
• Enhanced dv/dt capabilities offer improved ruggedness.
• Higher Gate voltage threshold offers improved noise
immunity.
TO-220 Full-Pak
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Max.
6.8
4.3
27
46
Units
A
W
VGS
dv/dt
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
ePeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
0.37
±30
24
-55 to + 150
W/°C
V
V/ns
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Diode Characteristics
300 (1.6mm from case )
x x10lb in (1.1N m)
Symbol
IS
Parameter
Continuous Source Current
Min. Typ. Max. Units Conditions
––– ––– 6.8
MOSFET symbol
D
(Body Diode)
A showing the
ISM Pulsed Source Current
Ã(Body Diode)
VSD Diode Forward Voltage
––– ––– 27
––– ––– 1.5
integral reverse
G
p-n junction diode.
S
fV TJ = 25°C, IS = 6.8A, VGS = 0V
trr Reverse Recovery Time
f––– 85 130 ns TJ = 25°C, IF = 6.8A
––– 130 200
TJ = 125°C, di/dt = 100A/µs
fQrr Reverse Recovery Charge ––– 280 420 nC TJ = 25°C, IS = 6.8A, VGS = 0V
f––– 570 860
TJ = 125°C, di/dt = 100A/µs
IRRM Reverse Recovery Current
––– 5.9 8.9 A TJ = 25°C
ton Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Document Number: 91177
8/23/04
www.vishay.com
1
1 page 100
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
1
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1 10
1msec
10msec
100 1000
VDS, Drain-to-Source Voltage (V)
10000
Fig 9. Maximum Safe Operating Area
IRFIB7N50LPbF
7
6
5
4
3
2
1
0
25
50 75 100 125
TC , Case Temperature (°C)
150
Fig 10. Maximum Drain Current vs.
Case Temperature
VDS
VGS
RG
RD
D.U.T.
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-VDD
Fig 11a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 11b. Switching Time Waveforms
Document Number: 91177
www.vishay.com
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFIB7N50LPbF.PDF ] |
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IRFIB7N50LPbF | Power MOSFET ( Transistor ) | International Rectifier |
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