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PDF IRF634N Data sheet ( Hoja de datos )

Número de pieza IRF634N
Descripción Power MOSFET ( Transistor )
Fabricantes Vishay 
Logotipo Vishay Logotipo



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No Preview Available ! IRF634N Hoja de datos, Descripción, Manual

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
34
Qgs (nC)
6.5
Qgd (nC)
16
Configuration
Single
0.435
I2PAK (TO-262)
TO-220
D
S
D
G
S
D
GG
D2PAK (TO-263)
S
N-Channel MOSFET
GD
S
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRF634NL, SiHF634NL) is
available for low-profile application.
ORDERING INFORMATION
Package
TO-220
Lead (Pb)-free
IRF634NPbF
SiHF634N-E3
SnPb
IRF634N
SiHF634N
Note
a. See device orientation.
D2PAK (TO-263)
IRF634NSPbF
SiHF634NS-E3
IRF634NS
SiHF634NS
D2PAK (TO-263)
IRF634NSTRLPbFa
SiHF634NSTL-E3a
IRF634NSTRLa
SiHF634NSTLa
D2PAK (TO-263)
IRF634NSTRRPbFa
SiHF634NSTR-E3a
IRF634NSTRRa
SiHF634NSTRa
I2PAK (TO-262)
IRF634NLPbF
SiHF634NL-E3
-
-
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
1

1 page




IRF634N pdf
IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
102
10
TJ = 175 °C
1
TJ = 25 °C
0.1 VGS = 0 V
0.2 0.4 0.6 0.8 1.0 1.2
91033_07
VSD, Source-to-Drain Voltage (V)
Fig. 7 - Typical Source-Drain Diode Forward Voltage
102
Operation in this area limited
by RDS(on)
10
100 µs
1 1 ms
0.1
1
TC = 25 °C
TJ = 175 °C
Single Pulse
10 102
10 ms
103
91033_08
VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
10.0
8.0
6.0
4.0
2.0
0.0
25 50 75 100 125 150 175
91033_09
TC, Case Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width 1 µs
Duty factor 0.1 %
+
- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Document Number: 91033
S-82999-Rev. A, 12-Jan-09
www.vishay.com
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