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PDF IRFPS35N50L Data sheet ( Hoja de datos )
| Número de pieza | IRFPS35N50L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
500
VGS = 10 V
230
65
110
Single
0.125
D
SUPER-247TM
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
S
D
G
FEATURES
• Super Fast Body Diode Eliminates the Need for
External Diodes in ZVS Applications
Available
• Lower Gate Charge Results in Simpler Drive RoHS*
Requirements
COMPLIANT
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise
Immunity
• Lead (Pb)-free Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
SUPER-247TM
IRFPS35N50LPbF
SiHFPS35N50L-E3
IRFPS35N50L
SiHFPS35N50L
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 0.97 mH, RG = 25 Ω, IAS = 34 A (see fig. 12).
c. ISD ≤ 34 A, dI/dt ≤ 765 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91257
S-81368-Rev. A, 21-Jul-08
LIMIT
500
± 30
34
22
140
3.6
560
34
45
450
15
- 55 to + 150
300d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
www.vishay.com
1
1 page  
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TC , Case Temperature ( °C)
Fig. 9 - Maximum Drain Current vs. Case Temperature
1
IRFPS35N50L, SiHFPS35N50L
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01 0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.1
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T
IAS
0.01 Ω
+
- VDAD A
A
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91257
S-81368-Rev. A, 21-Jul-08
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
www.vishay.com
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRFPS35N50L.PDF ] | |
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