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PDF IRFR010 Data sheet ( Hoja de datos )
| Número de pieza | IRFR010 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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IRFR010, SiHFR010
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
50
VGS = 10 V
10
2.6
4.8
Single
0.20
D
DPAK
(TO-252)
D
G
GS
S
N-Channel MOSFET
FEATURES
• Low Drive Current
• Surface Mount
• Fast Switching
• Ease of Paralleling
• Excellent Temperature Stability
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFET’S such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFET’s to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9012, SiHFR9012 is provided on 16 mm tape.
The straight lead option IRFU9012, SiHFU9012 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, dc-to-dc converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
Lead (Pb)-free
DPAK (TO-252)
IRFR010PbF
SiHFR010-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Avalanche Currentb
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
TJ, Tstg
Soldering Recommendations (Peak Temperature)d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 .
c. ISD 8.2 A, dI/dt 130 A/μs, VDD 40 V, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
50
± 20
8.2
5.2
33
1.5
0.20
25
2.0
- 55 to + 150
300
UNIT
V
A
W/°C
W
V/ns
°C
S13-0167-Rev. B, 04-Feb-13
1
Document Number: 91420
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRFR010, SiHFR010
Vishay Siliconix
VDS
VGS
RG
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 10 - Breakdown Voltage vs. Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S13-0167-Rev. B, 04-Feb-13
5
Document Number: 91420
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFR010.PDF ] | |
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