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PDF IRLL110 Data sheet ( Hoja de datos )
| Número de pieza | IRLL110 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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IRLL110, SiHLL110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
100
VGS = 5.0 V
6.1
2.6
3.3
Single
0.54
D
SOT-223
D
S
D
G
Marking code: LB
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Logic-level gate drive
• RDS(on) specified at VGS = 4 V and 5 V
• Fast switching
Available
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SOT-223
Tube
-
IRLL110PbF
SOT-223
Tape and Reel
SiHLL110TR-GE3
IRLL110TRPbF a
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
VGS at 5.0 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor (PCB Mount) e
Single Pulse Avalanche Energy b
Repetitive Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount) e
Peak Diode Recovery dV/dt c
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 , IAS = 1.5 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
LIMIT
100
± 10
1.5
0.93
12
0.025
0.017
50
1.5
0.31
3.1
2.0
5.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-1195-Rev. F, 25-May-15
1
Document Number: 91320
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
Fig. 9 - Maximum Drain Current vs. Case Temperature
IRLL110, SiHLL110
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
5V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
S15-1195-Rev. F, 25-May-15
5
Document Number: 91320
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRLL110.PDF ] | |
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