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PDF GP14NC60KD Datasheet ( Hoja de datos )

Número de pieza GP14NC60KD
Descripción STGP14NC60KD
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo

Total 16 Páginas
		
GP14NC60KD Hoja de datos, Descripción, Manual
STGB14NC60KD
STGF14NC60KD, STGP14NC60KD
14 A, 600 V - short-circuit rugged IGBT
Features
Short circuit withstand time 10µs.
Low on-voltage drop (VCE(sat))
Low Cres / Cies ratio (no cross conduction
susceptibility)
Switching losses include diode recovery
energy
Very soft ultra fast recovery antiparallel diode
Applications
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
TAB
2
3
1
D²PAK
TAB
3
2
1
TO-220
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB14NC60KDT4
GB14NC60KD
STGF14NC60KD
GF14NC60KD
STGP14NC60KD
GP14NC60KD
Package
D²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tube
March 2010
Doc ID 11424 Rev 7
1/16
www.st.com
16

1 page

GP14NC60KD pdf
STGB14NC60KD, STGF14NC60KD, STGP14NC60KD
Electrical characteristics
Table 6. Switching on/off (inductive load)
Symbol
Parameter
Test conditions
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
td(on)
tr
(di/dt)on
Turn-on delay time
Current rise time
Turn-on current slope
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
(see Figure 18)
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
Tj= 125 °C
(see Figure 18)
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
tr(Voff)
td(off)
tf
Off voltage rise time
Turn-off delay time
Current fall time
Vcc = 390 V, IC = 7 A,
RGE = 10 , VGE = 15 V
(see Figure 18)
Vcc = 390 V, IC = 7 A,
RGE = 10 , VGE = 15 V
Tj= 125 °C
(see Figure 18)
Min. Typ. Max. Unit
22.5 ns
- 8.5 - ns
700 A/µs
22 ns
- 9.5 - ns
680 A/µs
60 ns
- 116 - ns
75 ns
24 ns
- 196 - ns
144 ns
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min Typ. Max Unit
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
Eon (1)
Eoff (2)
Ets
Turn-on switching losses
Turn-off switching losses
Total switching losses
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
(see Figure 18)
VCC = 390 V, IC = 7 A
RG= 10 , VGE= 15 V,
Tj= 125 °C
(see Figure 18)
82 µJ
- 155 - µJ
237 µJ
131 µJ
- 370 - µJ
501 µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit. If the IGBT is offered in a package
with a co-pack diode, the co-pack diode is used as external diode. IGBTs and DIODE are at the same
temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current.
Table 8. Collector-emitter diode
Symbol
Parameter
Test conditions
VF Forward on-voltage
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
trr Reverse recovery time
Qrr Reverse recovery charge
Irrm Reverse recovery current
IF = 7 A
IF = 7 A, TC= 125 °C
IF = 7 A, VR = 40 V,
di/dt = 100 A/µs
(see Figure 21)
IF = 7 A, VR = 40 V,
Tj = 125 °C,
di/dt = 100 A/µs
(see Figure 21)
Doc ID 11424 Rev 7
Min Typ. Max Unit
1.8 2.1
1.3
V
V
37 ns
40 nC
2.1 A
61 ns
98 nC
3.2 A
5/16

5 Page

GP14NC60KD arduino
STGB14NC60KD, STGF14NC60KD, STGP14NC60KD
Package mechanical data
D2PAK (TO-263) mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60
0.173
0.181
A1 0.03
0.23
0.001
0.009
b 0.70
b2 1.14
0.93
1.70
0.027
0.045
0.037
0.067
c 0.45
0.60
0.017
0.024
c2 1.23
1.36
0.048
0.053
D 8.95
9.35
0.352
0.368
D1 7.50
0.295
E 10
10.40
0.394
0.409
E1 8.50
0.334
e 2.54
0.1
e1 4.88
H 15
5.28
15.85
0.192
0.590
0.208
0.624
J1 2.49
2.69
0.099
0.106
L 2.29
2.79
0.090
0.110
L1 1.27
1.40
0.05
0.055
L2 1.30
1.75
0.051
0.069
R 0.4
0.016
V2 0°
8° 0°
8°
0079457_M
Doc ID 11424 Rev 7
11/16

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