|
|
PDF IRFU9010 Data sheet ( Hoja de datos )
| Número de pieza | IRFU9010 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRFU9010 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
- 50
VGS = - 10 V
9.1
3.0
5.9
Single
0.50
S
DPAK
(TO-252)
D
IPAK
(TO-251)
D
G
GS
GD S
D
P-Channel MOSFET
FEATURES
• Surface Mountable (Order as IRFR9010,
SiHFR9010)
• Straight Lead Option (Order as IRFU9010,
SiHFU9010)
• Repetitive Avalanche Ratings
• Dynamic dV/dt Rating
• Simple Drive Requirements
• Ease of Paralleling
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFET technology is the key to Vishay’s
advanced line of power MOSFET transistors. The efficient
geometry and unique processing of this latest “State of the
Art” design achieves: very low on-state resistance
combined with high transconductance; superior reverse
energy and diode recovery dV/dt capability.
The power MOSFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
Surface mount packages enhance circuit performance by
reducing stray inductances and capacitance. The DPAK
(TO-252) surface mount package brings the advantages of
power MOSFETs to high volume applications where PC
Board surface mounting is desirable. The surface mount
option IRFR9010, SiHFR9010 is provided on 16 mm tape.
The straight lead option IRFU9010, SiHFU9010 of the device
is called the IPAK (TO-251).
They are well suited for applications where limited heat
dissipation is required such as, computers and peripherals,
telecommunication equipment, DC/DC converters, and a
wide range of consumer products.
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and Halogen-free
SiHFR9010-GE3
Lead (Pb)-free
IRFR9010PbF
SiHFR9010-E3
Note
a. See device orientation.
DPAK (TO-252)
SiHFR9010TR-GE3a
IRFR9010TRPbFa
SiHFR9010T-E3a
DPAK (TO-252)
SiHFR9010TRL-GE3a
IRFR9010TRLPbFa
SiHFR9010TL-E3a
IPAK (TO-251)
SiHFU9010-GE3
IRFU9010PbF
SiHFU9010-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
VGS at - 10 V
TC = 25 °C
TC = 100 °C
TC = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14).
b. VDD = - 25 V, starting TJ = 25 °C, L = 9.7 mH, Rg = 25 , peak IL = - 5.3 A.
c. ISD - 5.3 A, dI/dt - 80 A/μs, VDD 40 V, TJ 150 °C, suggested Rg = 24 .
d. 0.063" (1.6 mm) from case.
LIMIT
- 50
± 20
- 5.3
- 3.3
- 21
0.20
136
- 5.3
2.5
25
5.8
- 55 to + 150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S13-0167-Rev. D, 04-Feb-13
1
Document Number: 91378
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
www.vishay.com
Vishay Siliconix
Fig. 11 - Typical On-Resistance vs. Drain Current
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 13a - Maximum Avalanche vs. Starting Junction
Temperature
VDS
Vary tp to obtain
required IL
Rg
L
D.U.T.
- 10 V
tp
0.05 Ω
-
+
V
DD
IL
Fig. 13b - Unclamped Inductive Test Circuit
IAS
VDS
IL
VDD
tp
VDS
Fig. 13c - Unclamped Inductive Waveforms
S13-0167-Rev. D, 04-Feb-13
5
Document Number: 91378
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRFU9010.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRFU9010 | (IRFR9010/14 / IRFU9010/14) P-Channel Power MOSFET |  Samsung Electronics |
| IRFU9010 | P-Channel Transistor |  International Rectifier |
| IRFU9010 | Power MOSFET ( Transistor ) | Vishay |
| IRFU9012 | P-Channel Transistor | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |