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PDF IRGP4069-EPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4069-EPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
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INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
PD - 97426
IRGP4069PbF
IRGP4069-EPbF
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 35A
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.6V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
CC
GC E
TO-247AC
IRGP4069PbF
GC E
TO-247AD
IRGP4069-EPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
76
50
35
105
140
±20
±30
268
134
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.56
–––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
10/02/09
1 page  
IRGP4069PbF/IRGP4069-EPbF
1000
3000
tdOFF
100
tF
2500
2000
1500
EON
EOFF
tdON
10
0
tR
10 20 30 40 50 60 70
IC (A)
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
1000
500
0
25 50 75 100
Rg (Ω)
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
20 300
tdOFF
100
tF
tdON
tR
Isc
15
Tsc
225
10 150
5 75
10
0
10 20 30 40 50
RG (Ω)
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
10000
0
8 10 12 14 16
VGE (V)
Fig. 16 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
0
18
1000
Cies
www.irf.com
100 Coes
Cres
10
0
100 200 300 400
VCE (V)
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
500
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRGP4069-EPbF.PDF ] | |
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