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PDF IRF9Z24L Data sheet ( Hoja de datos )
| Número de pieza | IRF9Z24L | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
- 60
VGS = - 10 V
19
Qgs (nC)
5.4
Qgd (nC)
11
Configuration
Single
0.28
S
I2PAK (TO-262)
D2PAK (TO-263)
G
G
SD
D
G
S
D
P-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRF9Z24S, SiHF9Z24S)
• Low-Profile Through-Hole (IRF9Z24L, SiHF9Z24L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application.
The through-hole version (IR9Z24L, SiH9Z24L) is available
for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9Z24S-GE3
Lead (Pb)-free
Note
a. See device orientation.
IRF9Z24SPbF
SiHF9Z24S-E3
D2PAK (TO-263)
SiHF9Z24STRL-GE3a
IRF9Z24STRLPbFa
SiHF9Z24STL-E3a
D2PAK (TO-263)
SiHF9Z24STRR-GE3a
IRF9Z24STRRPbFa
SiHF9Z24STR-E3a
I2PAK (TO-262)
-
IRF9Z24LPbF
SiHF9Z24L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
Continuous Drain Currente
Pulsed Drain Currenta, e
VGS at - 10 V
TC = 25 °C
TC = 100 °C
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
Operating Junction and Storage Temperature Range
TA = 25 °C
TC = 25 °C
PD
dV/dt
TJ, Tstg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = - 11 A (see fig. 12).
c. ISD - 11 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z24, SiHF9Z24 data and test conditions.
LIMIT
- 60
± 20
- 11
- 7.7
- 44
0.40
240
- 11
6.0
3.7
60
- 4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91091
S11-1063-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
15
12
9
6
3
0
25
91091_09
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig. 9 - Maximum Drain Current vs. Case Temperature
10
VDS
VGS
Rg
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
1 D = 0.50
0.2
0.1
0.05
0.1 0.02
0.01
10-2
10-5
91091_11
Single Pulse
(Thermal Response)
10-4
10-3
10-2
0.1
t1, Rectangular Pulse Duration (s)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1 10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
- 10 V
tp
L
D.U.T.
IAS
0.01 Ω
-
+
V
DD
IAS
VDS
VDD
tp
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91091
S11-1063-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF9Z24L.PDF ] | |
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