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PDF IRF9Z14S Data sheet ( Hoja de datos )
| Número de pieza | IRF9Z14S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
| Logotipo |  |
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IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
- 60
VGS = - 10 V
12
Qgs (nC)
3.8
Qgd (nC)
5.1
Configuration
Single
0.50
I2PAK (TO-262)
D2PAK (TO-263)
S
G
SD
D
G
S
G
D
P-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Advanced Process Technology
• Surface Mount (IRF9Z14S, SiHF9Z14S)
• Low-Profile Through-Hole (IRF9Z14L, SiHF9Z14L)
• 175 °C Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of is
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
The through-hole version (IRF9Z14L, SiHF9Z14L) is
available for low-profile applications.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
D2PAK (TO-263)
SiHF9Z14S-GE3
IRF9Z14SPbF
SiHF9Z14S-E3
D2PAK (TO-263)
SiHF9Z14STRL-GE3a
IRF9Z14STRLPbFa
SiHF9Z14STL-E3a
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currente
Pulsed Drain Currenta, e
VGS at - 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
Repetiitive Avalanche Energya
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TC = 25 °C
TA = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 3.6 mH, Rg = 25 , IAS = - 6.7 A (see fig. 12).
c. ISD - 6.7 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z14, SiHF9Z14 data and test conditions.
I2PAK (TO-262)
SiHF9Z14L-GE3
IRF9Z14LPbF
SiHF9Z14L-E3
LIMIT
- 60
± 20
- 6.7
- 4.7
- 27
0.29
140
- 6.7
4.3
43
3.7
- 4.5
- 55 to + 175
300d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91089
S11-1052-Rev. C, 30-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
7.5
6.0
4.5
3.0
1.5
0.0
25
91089_09
50 75 100 125 150
TC, Case Temperature (°C)
175
Fig. 9 - Maximum Drain Current vs. Case Temperature
VDS
VGS
Rg
RD
D.U.T.
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
-
+VDD
Fig. 10a - Switching Time Test Circuit
VGS
10 %
td(on) tr
td(off) tf
90 %
VDS
Fig. 10b - Switching Time Waveforms
10
D = 0.5
1
0.2
0.1
0.05
0.02
0.1 0.01
10-2
10-5
91089_11
Single Pulse
(Thermal Response)
10-4
10-3 10-2 0.1
t1, Rectangular Pulse Duration (s)
PDM
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
1 10
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
VDS
Vary tp to obtain
required IAS
Rg
- 10 V
tp
L
D.U.T.
IAS
0.01 Ω
-
+
V
DD
Fig. 12a - Unclamped Inductive Test Circuit
IAS
VDS
VDD
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
Document Number: 91089
S11-1052-Rev. C, 30-May-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF9Z14S.PDF ] | |
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