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PDF IRF640S Data sheet ( Hoja de datos )
| Número de pieza | IRF640S | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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www.vishay.com
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
200
VGS = 10 V
70
13
39
Single
0.18
I2PAK (TO-262)
D2PAK (TO-26
D
G
DS
G
D
S
G
S
N-Channel MOSFET
FEATURES
• Surface mount
• Low-profile through-hole
• Available in tape and reel
Available
• Dynamic dV/dt rating
• 150 °C operating temperature
Available
• Fast switching
• Fully avalanche rated
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combinations of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the
highest power capability and the last lowest possible
on-resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0 W in a typical surface mount application. The
through-hole version (IRF640L/SiHF640L) is available for
low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF640S-GE3
Lead (Pb)-free
IRF640SPbF
SiHF640S-E3
Note
a. See device orientation.
D2PAK (TO-263)
SiHF640STRL-GE3 a
IRF640STRLPbF a
SiHF6340STL-E3 a
D2PAK (TO-263)
SiHF640STRR-GE3 a
IRF640STRRPbF a
SiHF640STR-E3 a
I2PAK (TO-262)
SiHF640L-GE3
IRF640LPbF
SiHF640L-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a, e
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
Single Pulse Avalanche Energy b, e
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c, e
TC = 25 °C
TA = 25 °C
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 2.7 mH, Rg = 25 , IAS = 18 A (see fig. 12).
c. ISD 18 A, dI/dt 150 A/μs, VDD VDS, TJ 150 °C.
d. 1.6 mm from case.
e. Uses IRF640/SiHF640 data and test conditions.
LIMIT
200
± 20
18
11
72
1.0
580
18
13
3.1
130
5.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S15-2667-Rev. D, 16-Nov-15
1
Document Number: 91037
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
IRF640S, IRF640L, SiHF640S, SiHF640L
Vishay Siliconix
15 V
VDS L
Driver
Rg
20 V
tp
D.U.T.
IAS
0.01 Ω
+
- VDAD
Fig. 12a - Unclamped Inductive Test Circuit
VDS
tp
IAS
Fig. 12b - Unclamped Inductive Waveforms
1400
1200
1000
Top
Bottom
ID
8.0 A
11.0 A
18.0 A
800
600
400
200
VDD = 50 V
0
25 50
75 100 125 150
91037_12c
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
10 V
QGS
VG
QG
QGD
Charge
Fig. 13a - Basic Gate Charge Waveform
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
+
D.U.T. - VDS
VGS
3 mA
IG ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
S15-2667-Rev. D, 16-Nov-15
5
Document Number: 91037
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet IRF640S.PDF ] | |
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