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PDF RJK60S4DPE Data sheet ( Hoja de datos )

Número de pieza RJK60S4DPE
Descripción High Speed Power Switching SJ MOS FET
Fabricantes Renesas 
Logotipo Renesas Logotipo



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No Preview Available ! RJK60S4DPE Hoja de datos, Descripción, Manual

Preliminary Datasheet
RJK60S4DPE
600V - 16A - SJ MOS FET
High Speed Power Switching
R07DS0733EJ0200
Rev.2.00
Oct 12, 2012
Features
Superjunction MOSFET
Low on-resistance
RDS(on) = 0.23 typ. (at ID = 8 A, VGS = 10 V, Ta = 25C)
High speed switching
tf = 21 ns typ. (at ID = 8 A, VGS = 10 V, RL = 37.5 , Rg = 10 , Ta = 25C)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
4
123
G
D
S
1. Gate
2. Drain
3. Source
4. Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Tc = 25C
Tc = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. STch = 25C, Tch 150C
3. Value at Tc = 25C
Symbol
VDSS
VGSS
ID Note1
ID Note1
ID
Note1
(pulse)
IDR Note1
IDR (pulse) Note1
IAPNote2
EARNote2
Pch Note3
ch-c
Tch
Tstg
Ratings
600
+30, 20
16
10.1
32
16
32
4
0.87
104.1
1.2
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0733EJ0200 Rev.2.00
Oct 12, 2012
Page 1 of 7

1 page




RJK60S4DPE pdf
RJK60S4DPE
Gate to Source Cutoff Voltage
vs. Case Temperature (Typical)
6
5 ID = 10 mA
4
3 1 mA
0.1 mA
2
1
VDS = 10 V
0
25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Drain to Source Breakdown Voltage
vs. Case Temperature (Typical)
800
700
600
500
ID = 10 mA
VGS = 0
400
25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1 0.05
0.02
0.01
1 shot pulse
0.01
10 μ
100 μ
θch – c(t) = γ s (t) • θ ch – c
θch – c = 1.2°C/W
PDM
D=
PW
T
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10 100
R07DS0733EJ0200 Rev.2.00
Oct 12, 2012
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