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Número de pieza | IPI030N10N3G | |
Descripción | Power Transistor | |
Fabricantes | Infineon Technologies | |
Logotipo | ||
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No Preview Available ! IPP030N10N3 G IPI030N10N3 G
OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
Product Summary
VDS
RDS(on),max
ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPP030N10N3 G IPI030N10N3 G
100 V
3 mW
100 A
Package
Marking
PG-TO220-3
030N10N
PG-TO262-3
030N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=100 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) See figure 3
Value
100
100
400
1000
±20
300
-55 ... 175
55/175/56
Unit
A
mJ
V
W
°C
Rev. 2.1
page 1
2011-07-18
1 page IPP030N10N3 G IPI030N10N3 G
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
300
250
200
10 V
7.5 V
6V
5.5 V
5V
150
100
4.5 V
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
6
5
4.5 V
4
5V
6V
3
7.5 V
10 V
2
50 1
0
01
VDS [V]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
300
250
200
150
100
50
0
0
Rev. 2.1
25 °C
175 °C
24
VGS [V]
0
2 0 40 80 120
ID [A]
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
160
240
200
160
120
80
40
0
60
page 5
40 80 120 160
ID [A]
2011-07-18
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IPI030N10N3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
IPI030N10N3G | Power Transistor | Infineon Technologies |
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